By Kenneth L. Ashley
Ebook by way of Ashley, Kenneth L.
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General voltage-gain relation from the transistor input. Gain relation from the signal source. General relation for the transistor output resistance. Voltage gain, including the effect of the transistor output resistance. 6. 7. References to the Electronics Book Sequence Chirlian, P. M. Analysis and Design of Electronic Circuits. McGraw-Hill, New York, 1965. Gray, P. R. , and R. G. Meyer . Analysis and Design of Analog Integrated Circuits, 1st, 2nd, and 3rd eds. Wiley, New York, 1977, 1984, and 1993.
The output-characteristic equation in the linear region corresponds to VDS ranging from the condition of Fig. 1(b) to that of Fig. 1(c). , the channel becomes progressively more wedge shaped). The result is an increase in the resistance of the channel as a function of VDS, and therefore a sublinear current – voltage relation develops. When VGS > Vtno, the electron charge in the channel can be related to the gate voltage by Qchan = Cox(VGS – Vtno) (per unit area of MOSFET looking down at the gate), where Cox is the parallel-plate capacitance (per unit area) formed by the MOS structure.
2, the MOSFET is a four-terminal device. The four-terminal version of the schematic symbol is repeated here in Fig. 2. The terminals again are the source, drain, gate, and body. The drain current and the three terminal-pair voltages are all interdependent such that iD = f(vDS, vGS, vSB). Use of the three-terminal schematic symbol for the transistor, as in Fig. 1, conveys the assumption that the body and source are connected. For an applied incremental Vgs, for example, there will be, in response, incremental drain current Id and incremental voltages Vds and Vsb.
Analog electronics with LabVIEW by Kenneth L. Ashley