By Suryadevara Babu
Advances in Chemical Mechanical Planarization (CMP) provides the most recent info on a mainstream method that's serious for high-volume, high-yield semiconductor production, or even extra in order gadget dimensions proceed to cut down. The expertise has grown to surround the removing and planarization of a number of steel and dielectric fabrics and layers either on the equipment and the metallization degrees, utilizing varied instruments and parameters, requiring advancements within the keep an eye on of topography and defects.
This very important e-book deals a scientific overview of basics and advances within the region. half One covers CMP of dielectric and steel motion pictures, with chapters concentrating on using specific innovations and methods, and on CMP of specific a variety of fabrics, together with extremely low-k fabrics and high-mobility channel fabrics, and finishing with a bankruptcy reviewing the environmental affects of CMP approaches.
Part addresses consumables and method regulate for better CMP, and contains chapters at the practise and characterization of slurry, diamond disc pad conditioning, using FTIR spectroscopy for characterization of floor techniques, and ways for defection characterization, mitigation, and reduction.
- Considers ideas and techniques for CMP of dielectric and steel films
- Includes chapters dedicated to CMP for specific materials
- Addresses consumables and approach keep watch over for greater CMP
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Additional resources for Advances in Chemical Mechanical Planarization (CMP)
CVD tungsten is typically used as the contact metal. Oxide CMP is typically a two-step process. At the ﬁrst polishing step, the majority of the bulk oxide is polished away. Typically, silica slurry and hard pad are used to maximize oxide removal rate and planarization efﬁciency. The main goal of the ﬁrst polishing step is to remove any initial oxide topography that was created by the gate module underneath and also to maintain good within-wafer uniformity. At the second polishing step, the remaining oxide is buffed away using gentle process conditions such as low downforce, soft pad, and colloidal silica slurry.
P. Suh, Tribophysics, Prentice-Hall, Englewood Cliffs, NJ, 1986. P. D. Dissertation), University of California, Berkeley, 1995. Y. , Challenges in planarization for sub-32nm logic technology, in: ADMETA 2008, Tokyo, October 2008. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond 2 M. F. J. 1 Introduction Since its inception in 1997 the copper chemical mechanical planarization (Cu CMP) process has played a key role in enabling Moore’s law predictions to become a reality.
26 SEM image after the poly open CMP (POC) process . or tungsten. After the electrode metal deposition, the metal gate CMP process, which is similar to conventional metal CMP such as Cu CMP, is used to create a metal gate. The goal of the POC process is to remove this sacriﬁcial oxide and expose the nitride spacer and cap nitride. In POC, within-die/within-wafer oxide, nitride thickness control, and defect control are keys for successful implementation of a RMG. The key process performance that must be met in POC is to minimize both polishing scratches and nitride loss by maximizing MRR selectivity between oxide and nitride.
Advances in Chemical Mechanical Planarization (CMP) by Suryadevara Babu